QT2305A-P沟道中低压MOS管-深圳市嘉芯业科技芯片

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mos管型号	沟道	封装	内阻(mΩ)	电流(A)	耐压(V)	状态	代替型号	规格书	样品
QT2305A	P	SOT23-3	110mΩ	3A	20V	量产			申请

* 上方QT2305A芯片参数仅供参考，详细技术参数请以QT2305A技术规格书为准

QT2305Amos管描述

QT2305AMOS管采用先进的沟槽技术，提供出色的RDS(ON)、低栅极电荷和低至2.5V的栅极电压操作。该器件适合用作负载开关或 PWM 应用。

QT2305AMOS一般特性

●VDS= -20V,ID= -4.1ARDS(ON)= 63mΩ@ VGS=-2.5V

RDS(ON)= 46mΩ@ VGS=-4.5V

●高功率和电流处理能力●表面贴装封装●无铅端子电镀●符合RoHS标准●无卤素

QT2305A应用

●PWM应用●负载开关●电源管理

QT2305ADescription

The QT2305Auses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.

QT2305AGeneral Features

●VDS= -20V,ID= -4.1ARDS(ON)= 63mΩ@ VGS=-2.5V

RDS(ON)= 46mΩ@ VGS=-4.5V

●High power and current handing capability●Surface mount package●Pb free terminal plating●RoHS compliant●Halogen free

QT2305AApplication

●PWM applications●Load switch●Power management

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Zero Gate Voltage Drain Current	IDSS	VDS=-20V,VGS=0V	-	-	-1	μA
Gate-Body Leakage Current	IGSS	VGS=±12V,VDS
On Characteristics (Note 3)
Gate Threshold Voltage	VGS(th)	VDS=VGS,ID=-250μ
Drain-Source On-State Resistance	RDS(ON)	VGS=-4.5V, ID=-4.1A	-	46	67	mΩ
Drain-Source On-State Resistance	RDS(ON)	VGS=-2.5V, ID=-3A	-	63	86	mΩ
Forward Transconductance	gFS	VDS=-5V,ID
Dynamic Characteristics (Note4)
Input Capacitance	Clss	VDS=-4V,VGS=0V, F=1.0MHz
Output Capacitance	Coss
Reverse Transfer Capacitance	Crss		-	190	-	PF
Switching Characteristics (Note 4)
Turn-on Delay Time	td(on)	VDD=-4V, ,RL=-1.2Ω, VGEN=-4.5V,Rg=1Ω
Turn-on Rise Time	tr
Turn-Off Delay Time	td(off)
Turn-Off Fall Time	tf
Total Gate Charge	Qg	VDS=-4V,ID=-4.1A,VGS=-4.5V
Gate-Source Charge	Qgs
Gate-Drain Charge	Qgd		-	1.6	-	nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)	VSD	VGS=0V,IS
Diode Forward Current (Note 2)	IS