QT2301-P沟道中低压MOS管-深圳市嘉芯业科技芯片

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mos管型号	沟道	封装	内阻(mΩ)	电流(A)	耐压(V)	状态	代替型号	规格书	样品
QT2301	P	SOT23-3	110mΩ	3A	20V	量产	ao2301		申请

* 上方QT2301芯片参数仅供参考，详细技术参数请以QT2301技术规格书为准

QT2301 MOS管说明

QT2301AI采用先进的沟槽

它利用最新的处理技术来实现高单元密度并降低导通电阻和高重复雪崩额定值。这些特点结合起来使这种设计

用于电源开关应用和各种其他应用的极其高效和可靠的设备

QT2301 MOS管一般特点

VDS=-20V,ID=-3A

RDS(ON)<110mΩ@VGS=4.5V

QT2301 MOS管应用

先进的 MOSFET 工艺技术专为 PWM、负载开关和通用应用而设计

具有低栅极电荷的超低导通电阻快速开关和反向体恢复

150℃工作温度

贴片2301mos管引脚图

QT2301 MOS属性	QT2301 MOS参数值
QT2301 MOS商品目录	场效应管(MOSFET)
QT2301 MOS功率(Pd)	1W
导通电阻(RDS(on)@Vgs,Id)	110mΩ 3A,4.5V
漏源电压(Vdss)	20V
QT2301 MOS类型	P沟道
阈值电压(Vgs(th)@Id)	1V 250μA
连续漏极电流(Id)	3A

QT2301 MOSDescription

TheQT2301AIuses advanced trench

It utilizes the latest processing techniquesto achievethe high cell density and reduces theon-resistance with high repetitive avalanche rating.These features combine to make this design

an extremelyefficient and reliable device for usein power switching application and a wide varietyof other applications

General Features

VDS=-20V,ID=-3A

RDS(ON)<110mΩ@VGS=4.5V

QT2301 MOSApplication

Advanced MOSFET process technologySpecial designed for PWM, load switching andgeneral purpose applications

Ultra low on-resistance with low gate chargeFast switching and reverse body recovery

150℃operating temperature

Maximum ratings (Ta=25℃unless otherwise noted)

Parameter	Symbol	Value	Unit
Drain-Source Voltage	VDS	20	V
Gate-Source Voltage	VGS	±12	V
Continuous Drain Current	ID	6	A
Pulsed Drain Current	IDM	25
Maximum Body-Diode Continuous Current	IS	2
Power Dissipation	PD	0.35	W
Thermal Resistance from Junction to Ambient	RθJA	357	℃/W
Junction Temperature	TJ	150	℃
Storage Temperature	Tstg	-55 ~+150	℃