mos管型号 | 沟道 | 封装 | 内阻(mΩ) | 电流(A) | 耐压(V) | 状态 | 代替型号 | 规格书 | 样品 |
---|---|---|---|---|---|---|---|---|---|
QT3400 | N | SOP-8 | 30mΩ | 5.8A | 30V | 量产 | AO3400 | ![]() |
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* 上方QT3400芯片参数仅供参考,详细技术参数请以QT3400技术规格书为准
The QT3400mos uses advanced trench technology to provide excellent RDS(ON), low gate charge and
Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | 30 | V | |
Gate-Source Voltage | VGS | ±12 | V | |
Drain Current-Continuous | ID | 5.8 | A | |
Drain Current-Pulsed (Note 1) | IDM | 30 | A | |
Maximum Power Dissipation | PD | 1.4 | W | |
Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ | |
Thermal Resistance,Junction-to-Ambient (Note 2) | RθJA | 89 | ℃/W |
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