mos管型号 | 沟道 | 封装 | 内阻(mΩ) | 电流(A) | 耐压(V) | 状态 | 代替型号 | 规格书 | 样品 |
---|---|---|---|---|---|---|---|---|---|
QT100N03 | N | TO-252 | 5.5mΩ | 100A | 30V | 量产 | 100N03mos | ![]() |
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* 上方QT100N03芯片参数仅供参考,详细技术参数请以QT100N03技术规格书为准
Symbol | Parameter | Rating | Units | ||
VGS | Gate-Source Voltage | ±20 | V | ||
ID@TC=25℃ | Continuous Drain Current, VGS @ 10V1 | 100 | A | ||
ID@TC=100℃ | Continuous Drain Current, VGS @ 10V1 | 57 | A | ||
ID@TA=25℃ | Continuous Drain Current, VGS @ 10V1 | 27 | 17 | A | |
ID@TA=70℃ | Continuous Drain Current, VGS @ 10V1 | 23 | 14.5 | A | |
IDM | Pulsed Drain Current2 | 160 | A | ||
EAS | Single Pulse Avalanche Energy3 | 115.2 | mJ | ||
IAS | Avalanche Current | 48 | A | ||
PD@TC=25℃ | Total Power Dissipation4 | 53 | W | ||
PD@TA=25℃ | Total Power Dissipation4 | 6 | 2.4 | W | |
TSTG | Storage Temperature Range | -55 to 175 | ℃ | ||
TJ | Operating Junction Temperature Range | -55 to 175 | ℃ | ||
RθJA | Thermal Resistance Junction-ambient (Steady State)1 | 62 | ℃/W | ||
RθJA | Thermal Resistance Junction-Ambient 1 (t≤10s) | 25 | ℃/W | ||
RθJC | Thermal Resistance Junction-Case1 | 2.8 | ℃/W |
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