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5n10场效应管规格书

作者:嘉芯业科技 来源:本站 最新更新于:2021-11-01 12:26:17 分享:

5n10场效应管规格书下载,请点击 5N10.PDF

5n10 mos Description
TheQT5N10MIusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand
operationwithgatevoltagesaslowas2.5V.This
deviceissuitableforuseasa
BatteryprotectionorinotherSwitchingapplication.
GeneralFeatures
VDS=100VID=5A
RDS(ON)<160mΩ@VGS=10VRDS(ON)<170mΩ@VGS=4.5V
Application
Batteryprotection
LoadswitchUninterruptiblepowersupply




5n10场效应管

AbsoluteMaximumRatings(TA=25℃unlessotherwisenoted)

ParameterSymbolLimitUnit
Drain-Source VoltageVDS100V
Gate-Source VoltageVGS±20V
Drain Current-ContinuousID3A
Drain Current-Pulsed (Note 1)IDM20A
Maximum Power DissipationPD1.5W
Operating Junction and Storage Temperature RangeTJ,TSTG-55 To 175
Thermal Resistance,Junction-to-Ambient (Note 2)RθJA100℃/W