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首页>>芯片选型>>中低高压MOS管>>N沟道中低压MOS管

mos管型号 沟道 封装 内阻(mΩ) 电流(A) 耐压(V) 状态 代替型号 规格书 样品
QT3400 N SOP-8 30mΩ 5.8A 30V 量产 AO3400 申请

* 上方QT3400芯片参数仅供参考,详细技术参数请以QT3400技术规格书为准

The QT3400mos uses advanced trench technology to provide excellent RDS(ON), low gate charge and 

operation with gate voltages as low as2.5V. This device is suitable for use as a Battery protection or in other Switching application.

QT3400mosGeneral Features
VDS=30V  ID=5.8A
RDS(ON)<30mΩ@VGS=10V(Type:28mΩ)
 
QT3400mosApplication
Battery protection
Load switch
Uninterruptible power supply
 
ao3400mos管封装参数

QT3400mos Absolute Maximum Ratings (TA=25℃unless otherwise noted)

ParameterSymbolLimitUnit
Drain-Source VoltageVDS30V
Gate-Source VoltageVGS±12V
Drain Current-ContinuousID5.8A
Drain Current-Pulsed (Note 1)IDM30A
Maximum Power DissipationPD1.4W
Operating Junction and Storage Temperature RangeTJ,TSTG-55 To 150
Thermal Resistance,Junction-to-Ambient (Note 2)RθJA89℃/W
 
 
 


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