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首页>>芯片选型>>中低高压MOS管>>N沟道中低压MOS管

mos管型号 沟道 封装 内阻(mΩ) 电流(A) 耐压(V) 状态 代替型号 规格书 样品
QT100N03 N TO-252 5.5mΩ 100A 30V 量产 100N03mos 申请

* 上方QT100N03芯片参数仅供参考,详细技术参数请以QT100N03技术规格书为准

100N03mosDescription
TheQT100N03uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.
100N03mos管封装脚位
100N03mosGeneral Features
VDS=30V  ID=100ARDS(ON)<5.5mΩ@VGS=10V
Application
Battery protection
Load switchUninterruptible power supply
 

100N03mosAbsolute Maximum Ratings (TC=25℃unless otherwisenoted)


SymbolParameterRatingUnits
VGSGate-Source Voltage±20V
ID@TC=25℃Continuous Drain Current, VGS @ 10V1100A
ID@TC=100℃Continuous Drain Current, VGS @ 10V157A
ID@TA=25℃Continuous Drain Current, VGS @ 10V12717A
ID@TA=70℃Continuous Drain Current, VGS @ 10V12314.5A
IDMPulsed Drain Current2160A
EASSingle Pulse Avalanche Energy3115.2mJ
IASAvalanche Current48A
PD@TC=25℃Total Power Dissipation453W
PD@TA=25℃Total Power Dissipation462.4W
TSTGStorage Temperature Range-55 to 175
TJOperating Junction Temperature Range-55 to 175
RθJAThermal Resistance Junction-ambient (Steady State)162℃/W
RθJAThermal Resistance Junction-Ambient (t≤10s)
 
25℃/W
RθJCThermal Resistance Junction-Case12.8℃/W
 


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